Model: SI9953DY

Transistor

Properties:

Inclosure Material
Ceramic
Overall Length
Between 0.189 inches and 0.197 inches
Overall Height
Between 0.053 inches and 0.069 inches
Overall Width
Between 0.228 inches and 0.244 inches
End Application
Encryption-decryption equipment
Internal Configuration
Field effect-dual gate
Mounting Method
Terminal
Overall Width Across Flats
Between 0.149 inches and 0.157 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 gate to source cutoff voltage
Current Rating Per Characteristic
-2.30 amperes service voltage of standard range and 2.30 amperes source cutoff current of standard range
Power Rating Per Characteristic
2.0 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
-55.0 degrees celsius junction and 150.0 degrees celsius junction
Terminal Type And Quantity
8 beam lead
NSN
5961-01-481-3934
Part Number
SI9953DY
Description
Transistor
CAGE
17856

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part SI9953DY NSN 5961-01-481-3934

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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