Model: SI2308BDS-T1-E3

Transistor

Properties:

Inclosure Material
Plastic
End Application
1430-01-087-6330
Voltage Rating In Volts Per Characteristic
60.0 base supply voltage
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius ambient air
Part Name Assigned By Controlling Agency
Transistor, mosfet, n-channel, 60v
NSN
5961-01-603-8425
Part Number
SI2308BDS-T1-E3
Description
Transistor
CAGE
17856

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part SI2308BDS-T1-E3 NSN 5961-01-603-8425

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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