Model: SF82001

Unitized Semiconductor Devices

Special Features:

Weapon system essential

Properties:

Inclosure Material
Metal
Overall Length
Between 0.165 inches and 0.185 inches
Terminal Length
0.500 inches
Overall Diameter
Between 0.335 inches and 0.370 inches
End Application
Sturgeon class ssn (637), virginia class cgn (41), ticonderoga class cg (47), forrestal class cv, los angeles class ssn (688), kidd class ddg, nimitz class cvn, arleigh burke class ddg, spruance class dd (963).
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-78
Component Name And Quantity
2 transistor
Mounting Method
Terminal
Criticality Code Justification
Feat
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
10.0 drain to source voltage all transistor and 35.0 breakdown voltage, gate-to-source, with all other terminals short-circuited to source all transistor
Current Rating Per Characteristic
100.00 microamperes zero-gate-voltage drain current all transistor and 1.20 milliamperes zero-gate-voltage drain current all transistor
Power Rating Per Characteristic
500.0 milliwatts total device dissipation all transistor
Terminal Type And Quantity
8 uninsulated wire lead
NSN
5961-00-378-0797
Part Number
SF82001
Description
Semiconductor Devices,unitized
CAGE
27014

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part SF82001 NSN 5961-00-378-0797

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
B
ESD:
B
MMAC:
EH
CRITL:
Y

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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