Model: SEN-5282
Diode Semiconductor DeviceSpecial Features:
Height of post: 0.200 inch ; center line distance to center line distance of posts: 0.584 inch ; mounting holes diameter: 0.120 inch ; peak pulse power dissipation at 25 degree c, 1ms, 60 kw, steady state power dissipation at 25 degree c 40 watts, t clamping 0 volts to (br) minus 1x 10 -8 seconds; operating and storage temp: minus 55, plus 150 degree c; reverse stand-off voltage vmw (volts) 33; reverse leakage at vwm ld (ua) 25; breakdown voltage at 10 ma v(br)(volts) 36.7; maximim clamping voltage at ipp vc (volts) 49; maximim peak pulse current ipp (amps) 120; protection leverl: mil-std-1275 compliant; 100v surge withstanding with 0.5-ohm source impendance non-hermetic version
Properties:
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Part SEN-5282 NSN 5961-01-587-5176
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsFreight Classification
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Schedule B and Export
- Schedule B: 8541100070
- SITC: 77631
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
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