Model: SD1220-1

Transistor

Properties:

Overall Length
0.287 inches
Overall Diameter
0.385 inches
Mounting Facility Quantity
2
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
35.0 breakdown voltage, collector-to-emitter, base open and 65.0 breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 4.0 breakdown voltage, emitter-to-base, collector open and 65.0 collector to base voltage/static/emitter open and 35.0 collector to emitter voltage/static/base open and 4.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
1.00 amperes source cutoff current and 1.00 milliamperes zero-gate-voltage source current preset and 10.00 milliamperes zero-gate-voltage source current minor
Transfer Ratio
5.0 static forward current transfer ratio, common-emitter
Terminal Type And Quantity
4 ribbon
NSN
5961-01-330-7295
Part Number
SD1220-1
Description
Transistor
CAGE
57962

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part SD1220-1 NSN 5961-01-330-7295

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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