Special Features:

Silicon; single phase full wave bridge; 600v peak inverse voltage; 420v rms voltage; 1.5 amp average rectified current at 25 degrees c and 1.05 amp at 100 degrees c; 10 amp recurrent surge current at 25 degrees c; hermetically sealed units; molded case; 0.875 in. Dia; 0.250 in. H; 4 solder stud type terminals 0.137 in. Max h; terminals equally spaced on 0.625 in. Diameter circle; 0ne 0.144 in. Diameter unthreaded mtg hole counterbored 0.310 in. Diameter by 0.125 in. Deep through center of case; m55.0 to p150.0 degrees c operating temp; storage temp range: m55.0 to p150.0 degrees celcius

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.