Special Features:

Silicon; single phase; full wave bridge; 50 peak inverse voltage; 38 rms voltage; 1.5 amp average rectified current at 25 degrees c and 1.05 amp at 100 degrees c; 10 amps recurrent surge current at 25 degrees c; medium recovery 1 microsecond; hermetically sealed junctions; molded case; 0.875 in. Dia; 0.250 in. H; 4 solder stud terminals 0.130 in. h; one 0.144 in. Diameter unthreaded mtg hole

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.