Special Features:

Qsilicon; single phase full wave fast recovery bridge rectifier; 200v breakdown voltage; m55 degrees c to p150 degrees c operating temp range; 0.765 in. Square mtg flange; 4 terminals; storage temp range: m55.0 to p150.0 dec celsius

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.