Special Features:

3 phase bridge rectifier; 100.0 piv vdc; 25.0 amp at 25.0 degrees c; derated 18.0 amp at 100.0 degrees c; operating temp m55.0 to p150.0 degrees c; dim. 2.250 in. Lg; 0.750 in. W; 1.000 in. Hgt

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.