Model: S6420B883B

Thyristor Semiconductor Device

Properties:

Overall Length
0.673 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Overall Width Across Flats
0.557 inches
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
200.0 breakdown voltage, dc
Current Rating Per Characteristic
35.00 amperes forward current, total rms horsepower metric
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius case
Thread Series Designator
Unf
Terminal Type And Quantity
3 tab, solder lug
NSN
5961-01-079-2603
Part Number
S6420B883B
Description
Semiconductor Device,thyristor
CAGE
34371

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part S6420B883B NSN 5961-01-079-2603

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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