Special Features:

Silicon, 3 phase full wave bridge, 800v peak inverse voltage, 2 amp average recitifed current at 55 degrees c and 1.2 amp at 100 degrees c, max reverse current at peak inverse voltage is 3 ua at 25 degrees c and 60 ua at 100 degrees c, recurrent surge at 25 degrees c is 10 amp, fast reverse recovery time, m55.0 to p150.0 degrees c operating temp, 5 solid silver leads, dim. Of leads 0.031 in. Dia, 0.875 in. Min lg; molded case is 1.000 in. Lg; 0.420 in. W; 0.180 in. H

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.