Model: S18C10A1

Diode Semiconductor Device

Properties:

Inclosure Material
Ceramic
Overall Length
7.677 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
1000.0 repetitive peak reverse voltage and 700.0 nonrepetitive peak reverse voltage and 5.0 peak gate voltage and 1.3 on-state voltage, peak
Current Rating Per Characteristic
165.00 amperes drain current megawatts and 10.50 amperes collector current, dc major
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Thread Series Designator
Unf
NSN
5961-01-238-2344
Part Number
S18C10A1
Description
Semiconductor Device,diode
CAGE
51993

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part S18C10A1 NSN 5961-01-238-2344

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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