Model: RT-1016G

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Emitter
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
55.0 collector to base voltage, dc and 33.0 collector to emitter voltage, dc and 3.5 emitter to base voltage, dc
Current Rating Per Characteristic
250.00 milliamperes source cutoff current
Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector preset
NSN
5961-01-035-0317
Part Number
RT-1016G
Description
Transistor
CAGE
3B150

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part RT-1016G NSN 5961-01-035-0317

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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