Model: RHRP860

Diode Semiconductor Device

Special Features:

This diode is of silicon nitride passivated ion-implanted epitaxial planar construction and takes 8 amps.

Properties:

Mounting Facility Quantity
1
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon alloy
Voltage Rating In Volts Per Characteristic
400.0 repetitive peak reverse voltage and 600.0 repetitive peak reverse voltage and 400.0 working peak reverse voltage and 600.0 working peak reverse voltage
Part Name Assigned By Controlling Agency
Hyperfast diode
NSN
5961-01-598-9426
Part Number
RHRP860
Description
Semiconductor Device,diode
CAGE
07933

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part RHRP860 NSN 5961-01-598-9426

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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