Model: RF2164

Unitized Semiconductor Devices

Special Features:

Case contains beryllium oxide - handle and dispose iaw hazmat procedures

Properties:

Inclosure Material
Ceramic
Overall Length
Between 0.745 inches and 0.830 inches
Overall Height
0.240 inches
Overall Width
0.552 inches
Mounting Facility Quantity
2
Component Name And Quantity
2 transistor
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
65.0 drain to gate voltage all transistor and 65.0 drain to source voltage all transistor and 20.0 gate to source voltage all transistor
Current Rating Per Characteristic
4.00 amperes source cutoff current of standard range all transistor
Power Rating Per Characteristic
20.0 watts small-signal input power, common-collector absolute all transistor
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Precious Material And Location
Terminal surfaces gold
Precious Material
Gold
Test Data Document
80063-a3012715 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Terminal Type And Quantity
4 ribbon
NSN
5961-01-277-2620
Part Number
RF2164
Description
Semiconductor Devices,unitized
CAGE
50998

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part RF2164 NSN 5961-01-277-2620

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
G
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
060500
UFC:
81820
LTL:
NO RATING
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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