Model: Q531752209

Transistor

Special Features:

Junction pattern arrangement: pnp; weapon system essential

Properties:

Inclosure Material
Metal
Overall Length
1.252 inches
Overall Height
0.340 inches
Overall Width
0.700 inches
End Application
Missile, air-to-air phoenix (aim-54); aircraft, sof (ac-130h, mc-130h, ec-130e, hc-130); radar, series an/sps-4 (v); airborne mobile dir air spt ctl (21d), (02m jul 83) (an/uyq-3a); radio transmitter set, an/urt-23 (rts); sukpport equipment, b-52 aircraft; support equipment, b-1 aircraft; radar set, an/pps-5b; communications terminal, satellite an/gsc-39(v) 1
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-213aa
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Unthreaded hole
Criticality Code Justification
Feat
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
-60.0 collector to base voltage/static/emitter open and -60.0 collector to emitter voltage/static/base open and -7.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
Between -2.00 amperes source cutoff current and -4.00 amperes source cutoff current
Power Rating Per Characteristic
25.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Terminal Type And Quantity
2 pin and 1 case
Specification Data
81349-mil-s-19500/441 government specification
NSN
5961-00-139-1931
Part Number
Q531752209
Description
Transistor
CAGE
C2463

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part Q531752209 NSN 5961-00-139-1931

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
EH
CRITL:
Y

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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