Model: PSMN025-100D

Transistor

Special Features:

Fet = field-effect transistor (trenchmos technology)

Properties:

Overall Length
6.60 millimeters
Terminal Length
2.75 millimeters
Overall Height
10.0 millimeters
Overall Width
2.30 millimeters
Features Provided
High power
Semiconductor Material
Silicon
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Part Name Assigned By Controlling Agency
N-channel trenchmos siliconmax standard level fet
Special Test Features
High operating power, low conduction losses, suitable for high frequency applications
NSN
5961-01-580-4459
Part Number
PSMN025-100D
Description
Transistor
CAGE
18324

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part PSMN025-100D NSN 5961-01-580-4459

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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