Model: PM3646-18

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Overall Height
0.250 inches
Overall Diameter
0.215 inches
Internal Configuration
Junction contact
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
15.0 breakdown voltage, collector to emitter, sustained and 0.4 collector to emitter voltage, dc
NSN
5961-01-143-2532
Part Number
PM3646-18
Description
Transistor
CAGE
04713

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part PM3646-18 NSN 5961-01-143-2532

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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