Special Features:

Npn silicon microwave power transistors, common base configuration, broadband class c operation, high efficiency inter-digitized geometry, diffused emitter ballasting inter-digitized geometryh, diffused emiter ballasting resistors, gold metallization system, internal input and output impedance matching, hermetic metal/ceramic package, rohs compliant

Properties:

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.