Model: P3H012351-09

Unitized Semiconductor Devices

Special Features:

Design analysis; transistor junction pattern arrangement: npn

Properties:

Inclosure Material
Ceramic
Overall Length
0.785 inches
Terminal Length
0.120 inches
Overall Height
0.280 inches
Overall Width
0.300 inches
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-116
Electrode Internally-electrically Connected To Case
Collector
Component Name And Quantity
4 transistor
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Criticality Code Justification
Feat
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
60.0 collector to base voltage/static/emitter open all transistor and 40.0 collector to emitter voltage/static/base open all transistor and 5.0 breakdown voltage, emitter-to-base, collector open all transistor
Current Rating Per Characteristic
0.50 amperes source cutoff current all transistor
Power Rating Per Characteristic
1900.0 milliwatts small-signal input power, common-collector preset all transistor
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Nuclear Hardness Critical Feature
Hardened
Terminal Type And Quantity
14 pin
NSN
5961-00-275-7576
Part Number
P3H012351-09
Description
Semiconductor Devices,unitized
CAGE

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part P3H012351-09 NSN 5961-00-275-7576

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
AH
CRITL:
M

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
E
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

End Items End applications NSN 5961-00-275-7576 is a component of

  • Tomahawk Missile
  • B-52 Aircraft Support Equipment
  • B-1 Aircraft Support Equipment
  • Hc-130) Ec-130e Mc-130h Sof ( Ac-130h Aircraft
  • Sparrow (aim-7) Air-to-air Missile
  • C-2a (reprocured) Aircraft
  • Lightweight 3d (an/tps-59) Radar Set
  • Deep Submergence Systems Programs (dssp)
  • Tactical Air Opns Module (an/tyq-(23)
  • Lgm 30 Minuteman
  • 001725176
  • Radio Frequency Oscillator
  • 012591060
  • Spectrum Analyzer
  • 011474741
  • Processor Test Set
  • 002043052
  • Frequency Multiplier
  • 010486017
  • Converter-monitor
  • 011631168
  • Frequency Control S
  • 011681176
  • Radio Frequency Interference Filter

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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