Model: P32B8553-10

Diode Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
Between 0.350 inches and 0.370 inches
Terminal Length
1.062 inches
Overall Diameter
Between 0.180 inches and 0.200 inches
Electrode Internally-electrically Connected To Case
Cathode
Mounting Method
Terminal
Features Provided
Gold plated leads and hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
3.9 breakdown voltage, dc
Current Rating Per Characteristic
50.00 milliamperes source cutoff current absolute and 50.00 microamperes forward current, average peak
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius ambient air
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-00-538-3377
Part Number
P32B8553-10
Description
Semiconductor Device,diode
CAGE
99167

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part P32B8553-10 NSN 5961-00-538-3377

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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