Model: P215CH04HJO

Thyristor Semiconductor Device

Properties:

Voltage Rating In Volts Per Characteristic
400.0 repetitive peak off-state voltage and 3.0 gate trigger voltage, instantaneous and 1.7 on-state voltage, dc
Current Rating Per Characteristic
650.00 amperes forward current, total rms pascal and 200.00 milliamperes forward current, total rms absolute and 300.00 milliamperes forward current, total rms outside diameter
NSN
5961-01-335-2241
Part Number
P215CH04HJO
Description
Semiconductor Device,thyristor
CAGE
64481

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part P215CH04HJO NSN 5961-01-335-2241

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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