Model: OP505D

Photo Semiconductor Device

Properties:

Inclosure Material
Plastic
Overall Length
Between 0.180 inches and 0.200 inches
Terminal Length
0.500 inches
Overall Diameter
Between 0.145 inches and 0.165 inches
Mounting Method
Terminal
Semiconductor Material
Gallium arsenide
Voltage Rating In Volts Per Characteristic
30.0 breakdown voltage, collector-to-emitter, base open and 5.0 breakdown voltage, emitter to collector, base open
Current Rating Per Characteristic
0.55 microamperes service voltage
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius ambient air
Part Name Assigned By Controlling Agency
Infrared selected npn silicon phootransistor
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-01-535-2194
Part Number
OP505D
Description
Semiconductor Device,photo
CAGE
32694

A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.

Part OP505D NSN 5961-01-535-2194

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20587
FIIG:
A110A0
Concept No.:
1
App. Key:
C
Cond. Code:
2
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541409500
  • SITC: 77637
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Photosensitive semiconductor devices, nesoi

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