Model: NTE5069A
Diode Semiconductor DeviceSpecial Features:
voltage 4.7v; test current 53.0ma; max impedance zzt at izt 8 ohms, zzk 500 ohms at izk 1.0ma; max leakage current ir 10 microamps, volts 1.0; max forward current vf 1.2v, if 200ma; single phase, half wave, 60hz, resistive or inductive load, for capacitive load, derate current by 20%; tc
Properties:
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Part NTE5069A NSN 5961-01-568-3627
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsFreight Classification
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Schedule B and Export
- Schedule B: 8541100070
- SITC: 77631
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
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