Model: MS2393

Transistor

Special Features:

Designed for high power pulse iff, dme, and tacan; applications; 200 w (typ.) iff 1030 - 1090 mhz; 150 w (min.) dme 1025 - 1150 mhz; 140 w (typ.) tacan 960 - 1215 mhz; 8.2 db gain; refractory gold metallization; ballasting andlow thermal resistance for reliability and ruggedness; 30: 1 load vswr capability at specified operating conditions;

Properties:

Inclosure Material
Ceramic and metal
Overall Length
Between 0.895 inches and 0.906 inches
Semiconductor Material
Silicon alloy
Current Rating Per Characteristic
10.0 milliamperes emitter current, instantaneous
Power Rating Per Characteristic
583.0 watts total power dissipation
Part Name Assigned By Controlling Agency
Rf and microwave transistor
NSN
5961-01-641-5820
Part Number
MS2393
Description
Transistor
CAGE
9Z454

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part MS2393 NSN 5961-01-641-5820

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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