Model: MS1801

Unitized Semiconductor Devices

Special Features:

Ceramic case contains beryllium oxide - handle and dispose iaw hazmat procedures; transistor junction pattern arrangement: npn

Properties:

Inclosure Material
Ceramic and metal
Overall Length
0.900 inches
Overall Height
0.280 inches
Overall Width
0.735 inches
End Application
Satellite communications set, an/wsc- (v) 9
Component Name And Quantity
2 transistor
Mounting Method
Press fit
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
60.0 breakdown voltage, collector-to-emitter, with base short-circuited to emitter all transistor and 32.0 breakdown voltage, collector-to-emitter, base open all transistor and 4.0 breakdown voltage, emitter-to-base, collector open all transistor
Current Rating Per Characteristic
7.00 amperes source cutoff current all transistor
Power Rating Per Characteristic
270.0 watts small-signal input power, common-collector preset all transistor
Transfer Ratio
100.0 static forward current transfer ratio, common-emitter all transistor
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Precious Material And Location
Leads gold
Precious Material
Gold
Test Data Document
00724-20-00942 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Terminal Type And Quantity
8 ribbon
NSN
5961-01-212-8023
Part Number
MS1801
Description
Semiconductor Devices,unitized
CAGE

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part MS1801 NSN 5961-01-212-8023

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
G
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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