Model: MRF317

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
Between 0.960 inches and 0.990 inches
Overall Diameter
Between 0.490 inches and 0.510 inches
Function For Which Designed
Amplifier
End Application
General application
Mounting Facility Quantity
2
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
65.0 breakdown voltage, collector-to-base, emitter open and 35.0 breakdown voltage, collector-to-emitter, base open and 4.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
12.00 amperes source cutoff current
Power Rating Per Characteristic
270.0 watts small-signal input power, common-emitter peak
Terminal Type And Quantity
4 uninsulated wire lead
NSN
5961-01-126-5996
Part Number
MRF317
Description
Transistor
CAGE

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part MRF317 NSN 5961-01-126-5996

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
00
LVL_A:
Q
LVL_B:
Q

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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