Model: MPS651

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Overall Length
0.190 inches
Terminal Length
0.500 inches
Overall Height
0.670 inches
Overall Width
0.145 inches
Internal Configuration
Junction contact
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
60.0 breakdown voltage, collector-to-emitter, base open and 80.0 breakdown voltage, collector-to-base, emitter open and 5.0 breakdown voltage, emitter-to-base, collector open and 1.2 base to emitter saturation voltage and 1.0 base to emitter voltage, dc
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-190-9148
Part Number
MPS651
Description
Transistor
CAGE
04713

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part MPS651 NSN 5961-01-190-9148

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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