Model: MMSZ4V3T1

Diode Semiconductor Device

Special Features:

Zener voltage - 4.09 to 4.52 v and 3.30 to 4.00 v; zener impedance - 90 ohms and 600 ohms; 500 mw rating; surface mount; corrosion resistant finish; silicon

Properties:

Inclosure Material
Plastic
Overall Length
Between 0.140 inches and 0.152 inches
Overall Height
Between 0.055 inches and 0.071 inches
Overall Width
Between 0.037 inches and 0.053 inches
Semiconductor Material
Silicon
NSN
5961-01-557-1195
Part Number
MMSZ4V3T1
Description
Semiconductor Device,diode
CAGE
5V1P1

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part MMSZ4V3T1 NSN 5961-01-557-1195

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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