Model: MMBT6517LT1G

Transistor

Special Features:

Lead-free

Properties:

Inclosure Material
Plastic
Overall Length
Between 0.110 inches and 0.120 inches
Overall Height
Between 0.035 inches and 0.044 inches
Overall Width
Between 0.047 inches and 0.055 inches
Internal Configuration
Junction contact-double emitter
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-236
Internal Junction Configuration
Npn
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
350.0 collector to emitter voltage/static/base open
Current Rating Per Characteristic
100.00 milliamperes source cutoff current
Power Rating Per Characteristic
300.0 milliwatts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Terminal Type And Quantity
3 pin
NSN
5961-01-568-3199
Part Number
MMBT6517LT1G
Description
Transistor
CAGE
1MQ07

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part MMBT6517LT1G NSN 5961-01-568-3199

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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