Model: MM2613

Transistor

Special Features:

High frequency low power silicon npn bjt; junction pattern arrangement: npn

Properties:

Inclosure Material
Glass
Overall Length
0.710 millimeters
Terminal Length
0.210 millimeters
Mounting Facility Quantity
3
Internal Configuration
Junction contact
Mounting Method
Terminal
Terminal Circle Diameter
0.209 millimeters
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
40.0 breakdown voltage, collector to emitter, sustained and 60.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
50.00 milliamperes zero-gate-voltage source current blank
Power Rating Per Characteristic
175.0 milliwatts small-signal input power, common-emitter absolute
Maximum Operating Tempurature Per Measurement Point
-55.0 degrees celsius case and 200.0 degrees celsius case
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-00-238-3677
Part Number
MM2613
Description
Transistor
CAGE
04713

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part MM2613 NSN 5961-00-238-3677

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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