Model: MII150-12A4

Transistor

Special Features:

1200 volt max; 760 watts; high short circuit capability; mos input, voltage controlled; up to 30 khz switching frequency; ultra fast wheeling diode; low saturation voltage; low switching losses

Properties:

Inclosure Material
Ceramic
Overall Length
110.0 millimeters
Overall Height
30.0 millimeters
Overall Width
62.0 millimeters
Mounting Facility Quantity
4
Electrode Internally-electrically Connected To Case
Base
Mounting Method
Unthreaded hole
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
NSN
5961-01-627-5697
Part Number
MII150-12A4
Description
Transistor
CAGE
0A5K5

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part MII150-12A4 NSN 5961-01-627-5697

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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