Model: MDD26-16N1B

Diode Semiconductor Device

Special Features:

Dual

Properties:

Inclosure Material
Ceramic
Overall Length
92.0 millimeters
Overall Height
30.0 millimeters
Overall Width
20.8 millimeters
Mounting Facility Quantity
2
Mounting Method
Threaded stud
Voltage Rating In Volts Per Characteristic
1.38 forward voltage, peak and 1600.0 repetitive peak reverse voltage
Current Rating Per Characteristic
36.0 amperes forward current, repetitive, peak total value and 10.0 milliamperes reverse current, peak
Power Rating Per Characteristic
125.0 watts total power dissipation
Maximum Operating Tempurature Per Measurement Point
-40.0 degrees celsius ambient air and 125.0 degrees celsius ambient air
Part Name Assigned By Controlling Agency
Dual diode module
Terminal Type And Quantity
3 pin
NSN
5961-01-625-3406
Part Number
MDD26-16N1B
Description
Semiconductor Device,diode
CAGE
0A5K5

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part MDD26-16N1B NSN 5961-01-625-3406

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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