Special Features:

Four diffused silicon diodes interconnected in a transfer-molded plastic encapsulated case, 0.880 in. Min lg, 0.920 in. Max lg, 0.715 in. Min. W, 0.755 in. Max w, 0.240 in. Min h, 0.280 in. Max h, four ribbon type terminals spaced 0.180 in. Min to 0.220 in. Max c to c, one centrally located mtg hole through top of case to bottom of case, mtg hole 0.143 in. Min to 0.146 in. Max dia., m65 to p150 degrees c operating temp, 50v peak reverse voltage per cell, 35 v sine wave rms input voltage; storage temp range: minus 65.0 to 150 degrees celsius; unpackage weight: 7.500 grams

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.