Model: MBRS540T3

Diode Semiconductor Device

Properties:

Inclosure Material
Plastic
Overall Length
0.320 inches
Overall Height
0.101 inches
Overall Width
0.240 inches
Function For Which Designed
Rectifier
Electrode Internally-electrically Connected To Case
Cathode
Features Provided
Electrostatic sensitive
Semiconductor Material
Silicon alloy
Voltage Rating In Volts Per Characteristic
40.0 repetitive peak reverse voltage
Current Rating Per Characteristic
10.0 amperes forward current, repetitive, peak total value and 5.0 amperes forward current, average
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Part Name Assigned By Controlling Agency
Surface mount schottky power rectifier
NSN
5961-01-611-8998
Part Number
MBRS540T3
Description
Semiconductor Device,diode
CAGE
1MQ07

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part MBRS540T3 NSN 5961-01-611-8998

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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