Model: MBRS3200T3G

Diode Semiconductor Device

Properties:

Inclosure Material
Plastic
Overall Length
Between 0.205 inches and 0.220 inches
Overall Height
Between 0.075 inches and 0.095 inches
Overall Width
Between 0.130 inches and 0.150 inches
Voltage Rating In Volts Per Characteristic
200.0 reverse voltage, peak
Current Rating Per Characteristic
3.0 milliamperes forward current, average
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
NSN
5961-01-601-3889
Part Number
MBRS3200T3G
Description
Semiconductor Device,diode
CAGE
1MQ07

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part MBRS3200T3G NSN 5961-01-601-3889

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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