Model: MBD770DWT1G

Diode Semiconductor Device

Special Features:

Operating temperature: -55.00 deg. C. To 150.00 deg. C.; lead free; rohs compliant; 3000 count tape and reel;

Properties:

Overall Length
2.10 millimeters
Overall Height
0.95 millimeters
Overall Width
2.00 millimeters
End Application
V-22 osprey aircraft
Voltage Rating In Volts Per Characteristic
70.00 source supply voltage
Current Rating Per Characteristic
100.00 milliamperes source current
Capacitance Rating In Picofarads
1.00
Part Name Assigned By Controlling Agency
Schottky barrier diode
NSN
5961-01-650-5305
Part Number
MBD770DWT1G
Description
Semiconductor Device,diode
CAGE
5V1P1

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part MBD770DWT1G NSN 5961-01-650-5305

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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