Model: LQ801

Transistor

Special Features:

200 c max junction temp

Properties:

Inclosure Material
Glass
Overall Length
0.744 inches
Overall Height
0.200 inches
Overall Width
0.645 inches
Mounting Facility Quantity
2
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
70.0 drain to gate voltage and 70.0 drain to source voltage
Current Rating Per Characteristic
4.5 amperes drain current
Power Rating Per Characteristic
80.0 watts total device dissipation
Part Name Assigned By Controlling Agency
Rf power ldmos transistor
Terminal Type And Quantity
4 pin
NSN
5961-01-625-6771
Part Number
LQ801
Description
Transistor
CAGE
1HW28

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part LQ801 NSN 5961-01-625-6771

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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