Model: L8F
Photo Semiconductor Device0.260 inches overall height, 0.370 inches overall diameter, junction contact internal configuration, silicon semiconductor material.
Special Features:
Junction pattern arrangement: pnpn
Properties:
A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.
Part L8F NSN 5961-00-058-2525
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPackaging & Shipping
Freight Classification
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Schedule B and Export
- Schedule B: 8541409500
- SITC: 77637
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Photosensitive semiconductor devices, nesoi
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