Model: L01900

Transistor

Special Features:

Item must comply with rqmt of desc production standard no. L01900; junction pattern arrangement: pnp

Properties:

Inclosure Material
Metal
Overall Length
0.210 inches
Terminal Length
0.500 inches
Overall Diameter
0.230 inches
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Criticality Code Justification
Feat
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
60.0 breakdown voltage, collector-to-base, emitter open and 60.0 breakdown voltage, collector-to-emitter, base open and 5.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
600.00 milliamperes forward current, average universal and 1.00 milliamperes source cutoff current blank
Power Rating Per Characteristic
400.0 microwatts small-signal input power, common-collector
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-014-1597
Part Number
L01900
Description
Transistor
CAGE
16236

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part L01900 NSN 5961-01-014-1597

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
Y

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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