Special Features:

Silicon; 5.000 in. Lg; 0.750 in. Max h; 0.750 in. Max w; two 0.375 in. Max h turret type terminals; two 6-32 thd, 0.250 in. D, mtg holes located 4.500 in. C to c along lg; 15000 volts peak inverse voltage; 21 volts forward voltage, dc; 1.00 amps

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.