Model: KM500GA123D
TransistorSpecial Features:
Isolated copper baseplate using dbc direct copper bonding technology; mos input (voltage controlled); n channel, homogeneous si; low inductance case; very low tail current with low temperature dependence; high short circuit capability; latch-up free; fast and soft cal diodes; large clearance (12mm) and creepage distances (20mm)
Properties:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Part KM500GA123D NSN 5961-01-587-3554
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPackaging & Shipping
Freight Classification
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Schedule B and Export
- Schedule B: 8541500080
- SITC: 77639
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Semiconductor devices, nesoi
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