Model: K6T1008C2EDB7000

Memory Microcircuit

Special Features:

128k-word x 8-bit capacity; 70 ns access time; direct ttl compatibility; battery back-up operation capability

Properties:

Maximum Power Dissipation Rating
1.0 watts
Operating Tempurature Range
+0.0/+70.0 degrees celsius
Storage Tempurature Range
-55.0/+125.0 degrees celsius
End Application
Remote terminal unit, wlb-rtu (1 to 10)
Features Provided
3-state output
Inclosure Material
Plastic
Inclosure Configuration
Dual-in-line
Input Circuit Pattern
8 input
Part Name Assigned By Controlling Agency
Cmos static ram
Voltage Rating And Type Per Characteristic
4.5 volts power source and 5.5 volts power source
Memory Device Type
Ram
Terminal Type And Quantity
32 flat leads
NSN
5962-01-408-2869
Part Number
K6T1008C2EDB7000
Description
Microcircuit,memory
CAGE
0DUN9

A circuit designed to store information and/or coded instructions for later use. Item has pins or other connections to install in a computer or computing device. does not include magnetic drums, tapes, punched cards or the like. for items that have portable type connections see memory, portable, solid state.

Part K6T1008C2EDB7000 NSN 5962-01-408-2869

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
41015
FIIG:
A458A0
Concept No.:
1
App. Key:
F
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8542900000
  • SITC: 77689
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Electronic integrated circuits and microassembly parts

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