Model: JTX1N6121A

Diode Semiconductor Device

Special Features:

Low dynamic impedance; hermetically sealed in metoxillite fused metal oxide; 500 watt peak pulse power; 1.5 watt continuous; axial leaded; high reliability

Properties:

Inclosure Material
Ceramic
Overall Length
Between 2.140 inches and 2.785 inches
Overall Width
Between 0.085 inches and 0.140 inches
Features Provided
Hermetically sealed case
Voltage Rating In Volts Per Characteristic
38.7 breakdown voltage, dc
Current Rating Per Characteristic
1.00 microamperes forward current, average peak
NSN
5961-01-474-3669
Part Number
JTX1N6121A
Description
Semiconductor Device,diode
CAGE
14099

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JTX1N6121A NSN 5961-01-474-3669

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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