Model: JANTXV2N6760

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
0.182 inches
Overall Width
0.126 inches
Mounting Method
Press fit
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 peak gate voltage
Current Rating Per Characteristic
5.50 amperes emitter current, dc peak
Power Rating Per Characteristic
4.0 watts any acceptable preset
Test Data Document
81349-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Terminal Type And Quantity
1 bonding pad
Specification Data
81349-mil-s-19500/542f government specification
NSN
5961-01-465-4768
Part Number
JANTXV2N6760
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JANTXV2N6760 NSN 5961-01-465-4768

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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