Model: JANTXV2N6351

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
0.260 inches
Terminal Length
1.750 inches
Overall Diameter
0.370 inches
Internal Configuration
Junction contact-darlington connected
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-33
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Features Provided
Hermetically sealed case and quality assurance level txv
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
150.0 collector to base voltage/static/emitter open and 150.0 collector to emitter reverse voltage and 12.0 emitter to base voltage, dc
Current Rating Per Characteristic
10.00 amperes source cutoff current and 0.50 amperes source cutoff current
Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector preset
Transfer Ratio
1000.0 static forward current transfer ratio, common-emitter and 10000.0 static forward current transfer ratio, common-emitter
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Terminal Type And Quantity
4 uninsulated wire lead
Specification Data
81349-mil-s-19500/472 government specification
NSN
5961-01-324-5886
Part Number
JANTXV2N6351
Description
Transistor
CAGE
81349

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part JANTXV2N6351 NSN 5961-01-324-5886

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
EH
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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