Model: JANTXV1N6106

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
Between 0.140 inches and 0.185 inches
Terminal Length
Between 1.000 inches and 1.300 inches
Overall Diameter
Between 0.085 inches and 0.140 inches
Mounting Method
Terminal
Terminal Circle Diameter
Between 0.026 inches and 0.033 inches
Features Provided
Quality assurance level txv
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
9.00 breakover voltage, instantaneous and 11.00 breakover voltage, instantaneous
Voltage Tolerance In Percent
-5.0/+5.0
Current Rating Per Characteristic
125.00 milliamperes drain current peak and 20.00 microamperes forward current, average peak
Terminal Type And Quantity
2 uninsulated wire lead
Specification Data
81349-mil-s-19500/516 government specification
NSN
5961-01-293-7096
Part Number
JANTXV1N6106
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JANTXV1N6106 NSN 5961-01-293-7096

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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