Model: JANTXV1N5290-1

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
Between 0.120 inches and 0.300 inches
Overall Diameter
Between 0.060 inches and 0.107 inches
Mounting Facility Quantity
2
Joint Electronic Device Engineering Council/jedec/case Outline Designation
Do-7
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 forward voltage, peak
Current Rating Per Characteristic
0.47 milliamperes forward current, nonrepetitive, peak total value torr
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-01-565-1755
Part Number
JANTXV1N5290-1
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JANTXV1N5290-1 NSN 5961-01-565-1755

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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