Model: JANTX1N6464US

Diode Semiconductor Device

Special Features:

Surface mounted square end cap diodes

Properties:

Inclosure Material
Glass
Overall Length
Between 0.200 inches and 0.225 inches
Mounting Method
Compression
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
16.4 breakdown voltage, dc and 15.0 working peak reverse voltage
Current Rating Per Characteristic
500.00 microamperes forward current, average peak and 63.00 milliamperes forward current, average major
Terminal Type And Quantity
2 bonding pad
NSN
5961-01-512-9719
Part Number
JANTX1N6464US
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JANTX1N6464US NSN 5961-01-512-9719

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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