Model: JANTX1N3909A

Diode Semiconductor Device

Properties:

End Application
Turkey military services
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
50.0 working peak reverse voltage
Current Rating Per Characteristic
300.00 amperes forward current, dc
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius case
Part Name Assigned By Controlling Agency
Semiconductor device, diode, silicon, power rectifier, fast-recovery
Thread Series Designator
Unf
NSN
5961-01-582-7513
Part Number
JANTX1N3909A
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JANTX1N3909A NSN 5961-01-582-7513

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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